Jenion - Ion beam and Surface technique is a small company (engineering office) both for research and development at the field of plasma and thin film technology and for production of plasma probe devices for plasma analysis. Our main activities are:
Dual Target Magnetron Sputtering
In Direct Ion Beam Sputtering (DIBS) a target material is sputtered by an ion beam from a broad ion beam source with a defined primary sputter ion energy. In conventional magnetron sputtering the primary ion energy of the sputtering ions is not independent controllable and is determined by the sputter plasma parameters.
The new developed Dual Target Magnetron allows magnetron sputtering with controlled primary ion energy. Principle, function and first sputtered demonstration layers will be presented.
Dual Target Magnetron in Operation
Plasma Analysis
A compact and versatile device is offered (Jenion - PlasmaMon 3) for Plasma analysis with:
- Langmuir plasma probe arrays (16 probes),
- plasma sheet probe arrays (16 probes),
- Retarding Field Analyser for measurement of energy distributions of positive and negative ions and of electron energy distributions,
- other customer specified probes.
Retarding Field Analyser integrated into a plasma electrode for ion energy analysis
UHF-Plasma development
Ultra High Frequencies (UHF) range from 300 MHz to 1.000 MHz. Today UHF plasma generation becomes more and more available, because solid state generators for UHF enter the market.
UHF- ECR -Plasmas have some interesting advantages like:
- Only low magnetic field strengths required for ECR - resonance, which enables larger ECR sources,
- UHF transmission below 5 kW needs no wave guides and can be done with coaxial cables,
- high ionization degree for single charged ions at low operation pressures,
- lower heat dissipation from the plasma to the plasma chamber walls as by RF- driven plasma sources.
UHF- ECR- Plasma operated at 433 MHz, 150W