Applications of
Alternating Cold Cathode Plasma Sources

The ACC-plasma sources from JENION generate at high vacuum a plasma with reactive gases for applications like:

  • Plasma Immersion Ion Implantation (PIII),

  • Ion Assisted Deposition (IAD) of oxide and ceramic layers in conjunction with evaporators,

  • Ion Beam Assisted Deposition of metals and semiconductors with ion energies from 20 to 200 eV,

  • Diamond like carbon layer deposition (DLC),

  • surface modification with reactive plasmas.

The main advantage of the plasma source is the total filamentless operation (no hot cathode), which enables the operation with oxygen. The oxygen plasma itself furthermore enables the periodically cleaning of the source from carbon and graphite layers resulting from a carbon containing plasma.
By this procedure a lot of molecular gases like hydrocarbons, fluorocarbons e.t.a. can be used.
The following table shows usuable precursors for the ACC-Plasma sources:

Gas type


noble gases:

He, Ne, Ar, Kr

permanent gases.

H2, N2,O2


CH4, C2H2, ...

(graphite deposition at the ion source, removing by oxygen plasma)


CF4, C2F6,....

(graphite deposition at the ion source, removing by oxygen plasma)


CCl4, C2CL6,...

(graphite deposition at the ion source, removing by oxygen plasma)

water, alcohol e.t.c.

H20, C2H5OH,


Cl2, HCL

Depending on the plasmachemistry caused by the used precursor (e.g. Cl2) plasmachemical reactions between the electrodes and the plasma can lead to larger amounts of impurities, which can be lowered by use of more inert electrodes .The common used electrode material is stainless steel, working sufficient clean with most of the precursors of the table. Electrodes made from graphite or titanium or some other materials can be produced.

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