Ion Beam Assisted Deposition (IBAD)

For Ion Beam Assisted Deposition an evaporation beam (common from an electron beam evaporator) and an ion beam from an ion source are directed simultaneously to a substrate like shown at the following figure.

Metal or oxide targets are placed at the evaporator and used for thin film deposition. The ion beam can be generated from noble gases (like argon - with physical ion influence by ion bombardment) or from gases like nitrogen or oxygen e.t.c. (with additional chemical influence on the layer deposition leading to changed stoechiometry of nitrides or oxides).

JENION manufactures both inline and flange mounted Broad Beam Ion Sources. For IBAD inline mounted sources are better suited because of the possibility to mount and to direct the ion beam at best position at the vacuum chamber together with the evaporator.

In principle for IBAD ion energies from some eV to 1000 eV are applied. But for ion energies lower than approx. 100 eV gridless ion sources are better used and for higher ion energies broad beam ion sources with two extraction grids should be applied. Tab.1 shows the differences of this two energy ranges and the applied sources. The procedure with the ion energy range smaller 100 eV mostly is called Ion Assisted Deposition (IAD) because of the ions direct delivered from the plasma.

Ion energy range 100 - 1000 eV
Type of Source Broad beam ion source
Layer deposition influenced by Ions
Typ. growth rates 10 - 100 nm/min
Typ. atom/ion ratio 10 - 104
Typical applications IBAD of metal,semiconductor or isolating layers with defined compact structure and reduces inner stress


 
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