Ion Assisted Deposition (IAD)

Optical and ceramic oxide layers can be deposited by reactive or non-reactive magnetron sputtering of oxide targets or by evaporation of oxides or pure metals in conjunction with an oxygen plasma generated by plasma source. The ion current and the oxygen radical stream (Ox) of the chamber plasma is large enough to enable oxide deposition at rates of 1 - 5 nm/s like common delivered from electron beam evaporators. The following figure shows the principle of IAD.

Three important layer features are controlled by the plasma source:

  • Oxygen radicals and oxygen ions from the plasma shift the stoechiometric composition of the deposited oxide layer, resulting in control of the optical properties of the layer (refractive index, optical absorption, thickness),
  • The plasma enables a reduced deposition temperature (important for optical layers at polymer lenses e.t.c.)
  • The deposited layer have a higher density and a more compact structure because of ion bombardment.

Ion energy range 10 - 100
Type of Source Plasma Source
Layer deposition influenced by All generated plasma species (excited neutrals, ions, eletrons)
Typ. growth rates 10 - 300 nm/min
Typ. atom/ion ratio 10 - 1000
Typical applications IAD of optical coatings with defined optical parameters

IAD with JENION Plasma Sources         What is IBAD?         Download

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