Ion Assisted Deposition (IAD)

of Optical Layers with JENION ACC- Plasma Sources

Optical and ceramic oxide layers can be deposited by reactive or non-reactive magnetron sputtering of oxide targets or by evaporation of oxides or pure metals in conjunction with an oxygen plasma generated by plasma source. The ion current and the oxygen radical stream (Ox) of the chamber plasma is large enough to enable oxide deposition at rates of 1 - 5 nm/s like common delivered from electron beam evaporators. The following figure shows the principle of IAD.

Beside the ACC-plasma sources of 40 and 80 mm diameter also rectangular (linear) dimensions are available. The following table gives an overview about the properties of this sources.

  JENION ACC-40 PS JENION ACC-80 PS JENION ACC-30 x 150 PS

Typical application IAD for research Industrial IAD Special linear plasma sources for industrial use

Plasma source dimensions 100 mm diameter x 180 mm 130 mm diameter x 180 mm 200 x 100 x 190 mm

Output dimensions

40 mm diameter

80 mm diameter

30 x 150 mm

Output plasma current

10 100 mA

0.1 - 0.5 A

0.1 - 0.5 A

Discharge current

10 100 mA

0.1 - 0.5 A

0.1 - 0.5 A

Discharge voltage

350 - 800 Vs

350 - 800 Vs

350 800 Vs

Bias Voltage

0 V to 400 V

0 V to 400 V

0 V to 400 V

ion current density near field plasma [mAcm-2]

0.1 to 1

0.1 to 1

0.1 to 1

ion current density chamber plasma [µAcm-2]

10 to 50

10 to 50

10 to 50

ion energy [eV]

30 - 150

30 - 150

30 - 150

impurities

0.05 to 1 % of the plasma current

0.05 to 1 % of the plasma current

0.05 to 1 % of the plasma current

gas flow [sccm]

5 - 30 (Ar)

10 - 100 (Ar)

10 - 100 (Ar)

water flow for cooling [l/min]

(1 5) only for long term use

1 - 5

1 5


 
JENION ACC-Plasma Sources

 
What is IAD?         Download

 
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