Applications of

ACC-40 x300 IMP and ACC-40x600 IMP

The Broad Beam Ion Implanter is thought to be a non mass separated implanter for the ions:

  • nitrogen: formation of nitride layers,
  • oxygen : formation of oxygen layers,
  • carbon: formation of carbide layers,
  • and noble gases.

Furthermore the following table shows hydrogen and chlorine, which also successful can be implanted. Some more precursors are useful.



main ion

mean ion energy of the implanted atomic ion

mean dose factor


H2 H+(w), H2+(s),H3+(s) H2+ 0.5 *Wbeam 2 H3+-formation pressure dependent,
D2 D+(w), D2+(s),D3+(s) D2+ 0.5 *Wbeam 2 D3+-formation pressure dependent
N2 N+(m), N2+(s), N2+ 0.5 *Wbeam 2 N2+dissociates up » 1 keV, nitride formation
O2 O+(m),O2+(s), O2+ 0.5 *Wbeam 2 O2+dissociates up » 1 keV, oxide formation
Ar Ar2+(w), Ar+(s), Ar+ Wbeam 1 for controlled ion energy deposition
C2H2 C+(m),CHx+ (s), C2Hx+(w) CHx+ » 0.8*Wbeam 1.3 CHx+ dissociates up » 1 keV, carbide formation,
Cl2 Cl+(m),Cl2+(s) Cl2+ 0.5 *Wbeam 2 Cl2+dissociates up » 1 keV, chloride formation


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