Broad Beam Ion Implantation
Ion Implanters are well used in semiconductor fabrication. These are high specialised mass separated machines for ion doses in the range of 1010 to 1016 cm-2. They generate ion beams with energies between 1 and 300 keV. The beams have typical diameters of 10 to 20 mm requiring a complex scanning mechanism to implant larger areas. The following figure shows the principle of such an implanter. The footprint of such a machine requires 10 to 20 m2.
Principle of a mass separated ion implanter used in semiconductor fabrication
In contrary to this Broad Ion Beam Ion Implantation can be arranged in a vacuum equipment not larger and not more expensive than at other thin film techniques. The following figure shows the simplest case of such an equipment.
Schematic view of broad beam ion implanter with substrate holder at high voltage for batch processing
The broad ion beam delivered from a linear broad ion source (beam dimensions: width 30 mm length from 150 to 600 mm) is accelerated by the substrate holder itself, which is at high voltage between 5 and 50 keV. At the rotating substrate holder a batch of substrates can be arranged and implanted in one procedure. Other substrate motions like linear transport e.t.c. also can be arranged.
Schematic view of broad beam ion implanter with substrate holder at ground for continuos inline ion implantation
Now a special Linear Broad Ion Beam Source is used generating an ion beam at high voltage potential up to 60 kV.
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