Ion Beam Assisted Deposition (IBAD)
with the broad beam ion sources
JENION ACC-40 IS or with ACC-30 x 150 IS

For Ion Beam Assisted Deposition an evaporation beam (common from an electron beam evaporator) and an ion beam from an ion source are directed simultaneously to a substrate like shown at the following figure.

Metal or oxide targets are placed at the evaporator and used for thin film deposition. The ion beam can be generated from noble gases (like argon - with physical ion influence by ion bombardment) or from gases like nitrogen or oxygen e.t.c. (with additional chemical influence on the layer deposition leading to changed stoechiometry of nitrides or oxides). JENION manufactures both inline and flange mounted Broad Beam Ion Sources.

For IBAD inline mounted sources are better suited because of the possibility to mount and to direct the ion beam at best position at the vacuum chamber together with the evaporator.

Ion source JENION ACC-40 IS

Ion Source JENION ACC-30x150 IS

  JENION ACC-40 IS JENION ACC-30 x 150 IS
Typical application IBAD for research Speical linear ion sources for industrial use
Output diameter 40 mm 30 x 150 mm
Output ion current 1 - 20 mA 5 - 50 mA
Discharge current 10 - 100 mA 0.1 - 0.3 A
Discharge voltage 350 - 800 Vs 350 - 800 Vs
Ion energy 100 eV to 1000 eV 100 eV to 1000 eV
Ion current density [mAcm-2] 0.1 to 1 0.1 to 1
Impurities 0.05 to 1% of the plasma current 0.05 to 1% of the plasma current
Gas flow [sccm] 3 - 15 (Ar) 5 - 30 (Ar)
Water flow for cooling [l/mm] (1-5) only for long term use 1 - 5

 
JENION ACC-Plasma Sources

 
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